Initial surface reactions of atomic layer deposition

JOM

Volumn 61, Issue 6, 2009, Pages 17-22

  Kim, Jiyoung ^a,b   Kim, Tae Wook ^a  

^a The University of Texas at Dallas   (United States)

^b Department of Materials Science and Engineering ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; CONFORMAL DEPOSITION; DEPOSITION THICKNESS; FEW-CYCLE; GROWTH MECHANICS; HIGH ASPECT RATIO; INTERFACE FORMATION; NANO-MATERIALS; NON-LINEAR; NUMBER OF CYCLES; OPERATING PRINCIPLES; REACTION SURFACES; SELF-LIMITED; THIN-FILM DEPOSITION TECHNIQUE; THREE-DIMENSIONAL NANOSTRUCTURES;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; DEPOSITION; FILM THICKNESS; GATE DIELECTRICS; GATES (TRANSISTOR); NANOTECHNOLOGY; PASSIVATION; SURFACE REACTIONS;

FILM GROWTH;

EID: 70349756963     PISSN: 10474838     EISSN: 15431851     Source Type: Journal    
DOI: 10.1007/s11837-009-0082-y     Document Type: Review

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