메뉴 건너뛰기




Volumn 18, Issue 30, 2008, Pages 3521-3526

The surface chemistry of thin film atomic layer deposition (ALD) processes for electronic device manufacturing

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CAPILLARITY; CHEMICAL VAPOR DEPOSITION; CHEMISTRY; MICROELECTRONIC PROCESSING; MICROELECTRONICS; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SURFACE CHEMISTRY; THICK FILMS;

EID: 47749141558     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b803832e     Document Type: Article
Times cited : (114)

References (78)
  • 5
    • 33645521363 scopus 로고    scopus 로고
    • M. Houssa, Institute of Physics, Bristol, Philadelphia, pp. 17-64
    • M. Ritala, in High-k Gate Dielectrics, ed., M. Houssa, Institute of Physics, Bristol, Philadelphia, 2004, pp. 17-64
    • (2004) High-k Gate Dielectrics, Ed.
    • Ritala In, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.