Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1658-1661

  Lee, B ^a   Park, T J ^a   Hande, A ^a   Kim, M J ^a   Wallace, R M ^a   Kim, J ^a   Liu, X ^b   Yi, J H ^b   Li, H ^b   Rousseau, M ^b   Shenai, D ^b   Suydam, J ^b  

^a The University of Texas at Dallas   (United States)

^b ROHM AND HAAS COMPANY   (United States)

Author keywords

Atomic layer deposition (ALD); High k gate dielectrics; La formamidinate precursors; La2O3; Ozone

Indexed keywords

ATOMIC LAYER; ATOMIC LAYER DEPOSITED; ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; FORMAMIDINATE; FOUR-ORDER; HIGH-K GATE DIELECTRICS; LA FORMAMIDINATE PRECURSORS; LA2O3; METAL GATE; POST DEPOSITION ANNEALING; PROCESS WINDOW;

ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FILM GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); MOS CAPACITORS; OXIDANTS; OZONE; OZONE LAYER; TANTALUM COMPOUNDS;

LANTHANUM;

EID: 67349092157     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.056     Document Type: Article

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