Selective area metal-organic vapor phase epitaxy of nitride semiconductors for multicolor emission

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1053-1065

  Shioda, Tomonari ^a   Tomita, Yuki ^b   Sugiyama, Masakazu ^b   Shimogaki, Yukihiro ^b   Nakano, Yoshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

AlN; GaN; InGaN; InN; LED; Metalorganic vapor phase epitaxy (MOVPE); Monolithic integration; Multicolor; Selective area growth

Indexed keywords

ALN; GAN; INGAN; INN; LED; METALORGANIC VAPOR PHASE EPITAXY (MOVPE); MONOLITHIC INTEGRATION; MULTICOLOR; SELECTIVE AREA GROWTH;

CRYSTAL GROWTH; DIFFUSION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LUMINESCENCE; MONOLITHIC INTEGRATED CIRCUITS; ORGANIC LIGHT EMITTING DIODES (OLED); RATE CONSTANTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SIMULATED ANNEALING; SMELTING; SOLID STATE DEVICES; SURFACE DIFFUSION; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 70349303662     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2015433     Document Type: Article

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