Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 874-884

  Coleman, J J ^a,b   Lammert, R M ^a,b,c   Osowski, M L ^a,b   Jones, A M ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

Crystal growth; Integrated optoelectronics; Quantum well lasers; Semiconductor growth; Semiconductor lasers; Semiconductor materials; Strain.

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; LIGHT EMITTING DIODES; LIGHT MODULATORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; WAVEGUIDE JUNCTIONS;

BURIED HETEROSTRUCTURES (BH); PHOTONIC INTEGRATED CIRCUITS;

INTEGRATED OPTOELECTRONICS;

EID: 0031152483     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640641     Document Type: Article

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