Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

  Oh, Ho jin ^a,c   Sugiyama, Masakazu ^a,c   Nakano, Yoshiaki ^b,c   Shimogaki, Yukihiro ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Composition uniformity; Metalorganic vapor phase epitaxy (MOVPE); Organic group V precursor; Selective area growth; Surface reaction rate constant; Tertiarybutylarsine (TBAs); Tertiarybutylphosphine (TBP)

Indexed keywords

COMPOSITION; DIFFUSION; EPITAXIAL GROWTH; FILM GROWTH; MAGNETRON SPUTTERING; PHOTOLITHOGRAPHY; RATE CONSTANTS; SUBSTRATES; SURFACE REACTIONS;

ORGANIC PRECURSORS; SURFACE KINETICS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0344944957     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1195     Document Type: Article

References (7)

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