Selective area etching of InP with PCl3 in MOVPE

Journal of Crystal Growth

Volumn 307, Issue 1, 2007, Pages 92-96

  Ebert, C ^a   Bond, A ^a   Cao, H ^a   Levkoff, J ^a   Roberts, J ^a  

^a Apogee Photonics   (United States)

Author keywords

A3. MOCVD; A3. Selective area etching; A3. Selective area growth

Indexed keywords

CHEMICAL REACTORS; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS;

METAL ORGANIC VAPOR PHASE EPITAXY (MOVPE); SELECTIVE AREA ETCHING; SELECTIVE AREA GROWTH;

INDIUM COMPOUNDS;

EID: 34548127023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.06.020     Document Type: Article

References (10)

1. Caneau C., Bhat R., Koza M., Hayes J., and Esagui R. J. Crystal Growth 107 (1991) 203
2. Berttone D., Campi R., and Morello G. J. Crystal Growth 195 (1998) 624
3. Arakawa S., Itoh M., and Kasukawa A. Jpn. J. Appl. Phys. 41 (2002) 1076
4. P. Wolfram, W. Ebert, J. Kreissl, N. Grote, ICMOVPE-X Proceedings, vol. 10, 2000, p. 305.
5. A. Ougazzaden, L. Petticolas, M. Rader, S. Chu, Proceedings of IPRM'02, vol. 14, 2002, p. 327.
6. M. Harlow, M. Spurdens, R. Moss, Proceedings of IPRM'95, vol. 7, 1995, p. 329.
7. Arakawa S., Ito M., Nagasaki R., and Kaukauna A. Furakawa Rev. 23 (2003) 76
8. Ebert C., Levkoff J., Roberts J., Seiler J., Wanamaker C., and Pinnington T. J. Crystal Growth 298 (2007) 94
9. K. Naniwae, M. Ohya, K. Hamamoto, K. Nishi, T. Saski, Proceedings of IPRM'04, vol. 16, 2004, p. 126.
10. Gibbon M., Stagg J., Cureton C., Thrush E., Jones C., Mallard R., Pritchard R., Collis N., and Chew A. Semicond. Sci. Technol. 8 (1993) 998