Design of strain and bandgap profiles of InGaAsP fabricated by selective area metal-organic vapor phase epitaxy for polarization independent operation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 43-46

  Shioda, Tomonari ^a,c   Sugiyama, Masakazu ^a,c   Nakano, Yoshiaki ^b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ENERGY GAP; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; POLARIZATION; STRAIN;

BANDGAP DISTRIBUTION; VAPOR-PHASE DIFFUSION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 34748914572     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381118     Document Type: Conference Paper

References (15)

1. J. J. Coleman, R. M. Lammert, M. L. Osowski and A.M. Jones, "Progress in InGaAs-GaAs Selective-Area MOCVD Toward Photonic Integrated Circuits" IEEE J. Select Topics in Quantum Electron., vol. 3, pp. 874-884, 1997.
2. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi and A. Takai, "InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD", IEEE J. Quantum Electron., vol. 29, no. 6, pp. 2088-2096, 1993.
3. S. Kitamura, K. Komatsu and M. Kitamura, "Polarization-Insensitive Semiconductor Optical Amplifier Array Grown by Selective MOVPE", IEEE Photon Technol. Lett., vol. 6, pp. 173-175, 1994.
4. P.J.A. Thijs, L.F. Tiemeijer, J.J.M. Binsma and T. Dongen, "Progress in Long-Wavelength Strained-Layer InGaAs(P) Quantum-Well Semiconductor Lasers and Amplifiers", IEEE J. Quantum Electron., vol. 30, no. 2, pp. 477-499, 1994.
5. K. Morito, M. Ekawa, T. Watanabe and Y. Kotaki, "High-Output-Power Polarization-Insensitive Semiconductor Optical Amplifier", J. Lightwave Technol., vol. 21, no. 1, pp. 176-181, 2003.
6. M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota and Y. Tohmori, "Polarization-Insensitive SOA with a Strained Bulk Active Layer for Network Device Application", IEEE Photon. Technol. Lett., vol. 14, no. 6, pp. 765-767, 2002.
7. T. Ito, N. Yoshimoto, K. Magari and H. Sugiura, "Wide-Band Polarization-Independent Tensile-Strained InGaAs MQW-SOA Gate", IEEE Photon. Technol. Lett., vol. 10, no. 5, pp. 657-659, 1998.
8. M. Gibbon, J.P. Stagg, C.G. Cureton, EJ. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchard, N. Collis and A. Chew, "Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates", Semicond Sci. Technol., vol. 8, pp. 998-1010, 1993.
9. M.A. Alam, R. People, E. Isaacs, C.Y. Kim, K. Evans-Lutterodt, T. Slegrist, T.L. Pernell, J. Vandenberg, S.K. Sputz, S.N.G. Chu, D.V. Lang, L. Smith and M.S. Hybertsen, "Simulation and Characterization of the Selective Area Growth Process", Appl. Phys. Lett., vol. 74, no. 18, pp. 2617-2619, 1999.
10. T. Shioda, T. Doi, A. Al Amin, X.L. Song, M. Sugiyama, Y. Shimogaki and Y. Nakano, "Simulation and Design of the Emission Wavelength of Multiple Quantum Well Structures Fabricated by Selective Area Metal-Organic Vapor Phase Epitaxy", Thin Solid Films, vol. 498, pp. 174-178, 2006.
11. S. Kimura, H. Kimura, K. Kobayashi, T. Oohira, K. Izumi, Y. Sakata, Y. Tsusaka, K. Yokoyama, S. Takeda, M. Urakawa, Y. Kagoshima and J. Matsui, "High-resolution microbeam X-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy", Appl. Phys. Lett., vol. 77, pp. 1286-1288, Aug. 2000.
12. J.E. Greenspan, "Alloy composition dependence in selective area epitaxy on InP substrates", J. Crystal Growth, vol. 236, no. 1, pp. 273-280, 2002.
13. I. Vurgaftman, J.R. Mayer and L.R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys", J. Appl. Phys., vol. 89, no. 11, pp. 5815-5874, 2001.
14. J.W. Matthews and A.E. Blakeslee, "Defects in Epitaxial Multilayers", J. Crystal Growth, vol. 27, pp. 118-125, 1974.
15. T. Kitatani, A. Taike and M. Aoki, "Strain Relaxation in InGaAsP/InP Grown by Metal-Organic Vapor Phase Epitaxy", J. Crystal Growth, vol. 273, pp. 19-25, 2004.