Analysis of a time-dependent supply mechanism in selective area growth by MOCVD

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 405-410

  Greenspan, J E ^a   Blaauw, C ^a   Emmerstorfer, B ^a   Glew, R W ^a   Shih, I ^b  

^a NORTEL NETWORKS   (Canada)

^b MCGILL UNIVERSITY   (Canada)

Author keywords

A3.Metalorganic chemical vapor deposition; A3.Selective epitaxy; B2.Semiconducting III V materials

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE PHENOMENA;

SELECTIVE EPITAXY;

CRYSTAL GROWTH;

EID: 0037291342     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01845-6     Document Type: Conference Paper

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