Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (1 0 0) exact and misoriented substrate

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 664-667

  Song, Haizheng ^a,b,c   Song, Xueliang ^b,d   Sugiyama, Masakazu ^a,b   Nakano, Yoshiaki ^b,d   Shimogaki, Yukihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Surface reaction kinetics; A1. Surface reconstruction; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. GaAs

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; GALLIUM ALLOYS; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES; SURFACE REACTIONS;

GAS-PHASE REACTION; POTENTIAL REACTION; SELECTIVE EPITAXY; SURFACE RECONSTRUCTION;

REACTION KINETICS;

EID: 30344488442     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.091     Document Type: Conference Paper

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