A multiple quantum well integrated with a selectively grown quaternary layer

Semiconductor Science and Technology

Volumn 21, Issue 7, 2006, Pages 866-869

  Greenspan, J E ^a,b   Campbell, S ^a,c   Shih, I ^a  

^a MCGILL UNIVERSITY   (Canada)

^b Anrad Corporation   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS;

MOCVD REACTOR; QUATERNARY FILMS; QUATERNARY LAYERS; SELECTIVE AREA EPITAXY PROCESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33745262367     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/7/007     Document Type: Article

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