All-Selective MOVPE-Grown 1.3-μm Strained Multi-Quantum-Well Buried-Heterostructure Laser Diodes

IEEE Journal of Quantum Electronics

Volumn 35, Issue 3, 1999, Pages 368-376

  Sakata, Yasutaka ^a,b   Hosoda, Tetsuya ^a   Sasaki, Yoshihiro ^a   Kitamura, Shotaro ^a   Yamamoto, Masaki ^a   Inomoto, Yasumasa ^a,c   Komatsu, Keiro ^a,d,e  

^a NEC CORPORATION   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^e UNIVERSITY OF ARIZONA   (United States)

Author keywords

Buried heterostructure; High temperature operation; Optical access network; Selective MOVPE; Semiconductor laser; Strained MQW

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

MULTI-QUANTUM-WELL BURIED-HETEROSTRUCTURE LASER DIODES; OPTICAL ACCESS NETWORK;

QUANTUM WELL LASERS;

EID: 0033097896     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.748842     Document Type: Article

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