The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 427-432

  Forbes, D V ^a   Corbett, P B ^a   Hansen, D M ^a   Goodnough, T J ^a   Zhang, L ^a   Myli, K ^a   Yeh, J Y ^b   Mawst, L ^b  

^a Alfalight Inc   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Selective area epitaxy; B1. GaAs

Indexed keywords

BOUNDARY CONDITIONS; BOUNDARY LAYERS; COMPUTER SIMULATION; DEPOSITION; DIELECTRIC DEVICES; DIFFUSION; ELECTRIC REACTORS; MASKS; NUMERICAL METHODS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICA;

CLOSE-COUPLED SHOWERED (CCS) REACTORS; REACTOR PRESSURES; SELECTIVE AREA EPITAXY (SAE);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0346154893     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.038     Document Type: Conference Paper

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