Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6284-6291

  Oh, Ho Jin ^a,c   Sugiyama, Masakazu ^a,c   Nakano, Yoshiaki ^b,c   Shimogaki, Yukihiro ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaAs; Gas phase diffusion; Metalorganic vapor phase epitaxy (MOVPE); Selective area growth; Surface reaction rate constant; Tertiarybutylarsine (TBAs); Trimethylgallium (TMGa)

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; DIFFUSION; MASKS; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC COMPOUNDS; RATE CONSTANTS; SILICA; THERMAL EFFECTS;

CHAPMAN-ENSKOG THEORY; SELECTIVE AREA GROWTH (SAG);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0348017046     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6284     Document Type: Article

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