Kinetic analysis of InN selective area metal-organic vapor phase epitaxy

Applied Physics Express

Volumn 1, Issue 7, 2008, Pages 0711021-0711023

  Shioda, Tomonari ^a,b   Sugiyama, Masakazu ^b   Shimogaki, Yukihiro ^b   Nakano, Yoshiaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN GASES; GALLIUM NITRIDE; GROWTH (MATERIALS); MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SIMULATED ANNEALING; SURFACE DIFFUSION; VAPORS;

CATENARY SHAPES; CRYSTAL SURFACES; GROWTH CONDITIONS; GROWTH OF GAN; INGAASP; KINETIC ANALYSES; MONOLITHICALLY INTEGRATED; SELECTIVE AREAS; THICKNESS PROFILES; VAPOR PHASE DIFFUSIONS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 57649096918     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.071102     Document Type: Article

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