Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy

Nanotechnology

Volumn 20, Issue 38, 2009, Pages

  Vinaji, S ^a   Lochthofen, A ^a   Mertin, W ^a   Regolin, I ^a   Gutsche, C ^a   Prost, W ^a   Tegude, F J ^a   Bacher, G ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORE SHELL STRUCTURE; DEPLETION LAYER; GAAS; GAP REGIONS; HETEROSTRUCTURES; KELVIN PROBE FORCE MICROSCOPY; NANOWIRE GROWTH; THERMALLY ACTIVATED;

DOPING (ADDITIVES); ELECTRIC WIRE; GALLIUM ALLOYS; PHOSPHORUS; PROBES; SEMICONDUCTING GALLIUM;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; NANOWIRE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; ELECTRICITY; KELVIN PROBE FORCE MICROSCOPY; MATERIAL COATING; PRIORITY JOURNAL; SCANNING FORCE MICROSCOPY; SCANNING PROBE MICROSCOPY; SEMICONDUCTOR;

EID: 70349295969     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/38/385702     Document Type: Article

References (40)

1. Lu W and Lieber C M 2006 J. Phys. D: Appl. Phys. 39 R387
2. Huynh W U, Dittmer J J and Alivisatos A P 2002 Science 295 2425
3. Minot E D, Kelkensberg F, van Kouwen M, van Dam J A, Kouwenhoven L P, Zwiller V, Borgström M T, Wunnicke O, Verheijen M A and Bakkers E P A M 2007 Nano Lett. 7 367
4. Kim H-M, Cho Y-H, Lee H, Kim S I, Ryu S R, Kim D Y, Kang T W and Chung K S 2004 Nano Lett. 4 1059
5. Khorenko V, Regolin I, Neumann S, Prost W, Tegude F-J and Wiggers H 2004 Appl. Phys. Lett. 85 6407
6. Kikuchi A, Kawai M, Tada M and Kishino K 2004 Japan. J. Appl. Phys. 43 L1525
7. Mrtensson T, Svensson C P T, Wacaser B A, Larsson M W, Seifert W, Deppert K, Gustafsson A, Wallenberg L R and Samuelson L 2004 Nano Lett. 4 1987
8. Tian B, Kempa T J and Lieber C M 2009 Chem. Soc. Rev. 38 16
9. Bosi M and Pelosi C 2007 Prog. Photovolt: Res. Appl. 15 51
10. Dick K A, Deppert K, Karlson L S, Wallenberg L R, Samuelson L and Seifert W 2005 Adv. Funct. Mater. 15 1603
11. Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Nature 415 617
12. Verheijen M A, Immink G, de Smet T, Borgström M T and Bakkers E P A M 2006 J. Am. Chem. Soc. 128 1353
13. Nonnenmacher M, O'Boyle M P and Wickramasinghe H K 1991 Appl. Phys. Lett. 58 2921
14. Lochthofen A, Mertin W, Bacher G, Hoeppel L, Bader S, Off J and Hahn B 2008 Appl. Phys. Lett. 93 022107
15. Palermo V, Palma M and Samori P 2006 Adv. Mater. 18 145
16. Lochthofen A, Mertin W, Bacher G, Furitsch M, Brüderl G, Hahn B, Strauss U and Härle V 2007 Proc. SPIE 6473 64730Z
17. Meoded T, Shikler R, Fried N and Rosenwaks Y 1999 Appl. Phys. Lett. 75 2435
18. Doukkali A, Ledain S, Guasch C and Bonnet J 2004 Appl. Surf. Sci. 235 507
19. Lévque G, Girard P, Skouri E and Yarekha D 2000 Appl. Surf. Sci. 157 251
20. Katzer K-D, Mertin W, Bacher G, Jaeger A and Streubel K 2006 Appl. Phys. Lett. 89 103522
21. Cui X, Freitag M, Martel R, Brus L and Avouris P 2003 Nano Lett. 3 783
22. Goldsmith B R, Coroneus J G, Khalap V R, Kane A A, Weiss G A and Collins P G 2007 Science 315 77
23. Fan Z and Lu J G 2005 Appl. Phys. Lett. 86 032111
24. Cheng G, Wang S, Cheng K, Jiang X, Wang L, Li L, Du Z and Zou G 2008 Appl. Phys. Lett. 92 223116
25. Doh Y-J, Maher K N, Ouyang L, Yu C L, Park H and Park J 2008 Nano Lett. 8 4552
26. Wagner R S and Ellis W C 1964 Appl. Phys. Lett. 4 89
27. Hiruma K, Yazawa M, Haraguchi K, Ogawa K, Katsuyama T, Koguchi M and Kakibayashi H 1993 J. Appl. Phys. 74 3162
28. Gutsche C, Regolin I, Blekker K, Lysov A, Prost W and Tegude F J 2009 J. Appl. Phys. 105 024305
29. Sugimura H, Ishida Y, Hayashi K, Takai O and Nakagiri N 2002 Appl. Phys. Lett. 80 1459
30. Katzer K-D, Mertin W, Bacher G, Jaeger A and Streubel K 2006 Proc. SPIE 6134 61340I
31. Leng Y, Williams C C, Su L C and Stringfellow G B 1995 Appl. Phys. Lett. 66 1264
32. Jakobi K, Wallis R, Tong S, Maradudin A, Calandra C, Manghi F, Gradmann U and Chiarotti G 1994 Landolt-Börnstein New Series Physics of Solid Surfaces: Electronic and Vibrational Properties vol III/24b (Berlin: Springer) pp64-6
33. Levinshtein M, Rumyantsev S and Shur M 1996 Handbook Series on Semiconductor Parameters vol 1 (Singapore: World Scientific) p77 pp 104-5
34. Girard P 2001 Nanotechnology 12 485
35. Zerweck U, Loppacher C, Otto T, Grafström S and Eng L M 2005 Phys. Rev. B 71 125424
36. Jacobs H O, Leuchtmann P, Homan O J and Stemmer A 1998 J. Appl. Phys. 84 1168
37. Brunel D, Deresmes D and Mélin T 2009 Appl. Phys. Lett. 94 223508
38. Shikler R, Meoded T, Fried N, Mishori B and Rosenwaks Y 1999 J. Appl. Phys. 86 107
39. Mizutani T, Usunami T, Kishimoto S and Maezawa K 1999 Japan. J. Appl. Phys. 38 4893
40. Saraf S and Rosenwaks Y 2005 Surf. Sci. 574 L35