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Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growth

(6) Gutsche, Christoph a Regolin, Ingo a Blekker, Kai a Lysov, Andrey a Prost, Werner a Tegude, Franz J a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; GROWTH (MATERIALS); METAL INSULATOR BOUNDARIES; METALLORGANIC VAPOR PHASE EPITAXY; MIS DEVICES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; TRANSISTORS; VAPORS; ZINC;

CONCENTRATION MODELS; CURRENT INCREASE; DIETHYL ZINCS; DOPING CONCENTRATIONS; ELECTRICAL CONDUCTIVITY MEASUREMENTS; GAAS; GAAS SUBSTRATES; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-ORGANIC VAPOR-PHASE EPITAXIES; ORDERS OF MAGNITUDES; P -TYPE CONDUCTIVITIES; P-TYPE DOPING; SINGLE NANOWIRES; SURFACE DEPLETIONS; TRANSFER CHARACTERISTICS; VAPOR-LIQUID-SOLID GROWTHS;

GALLIUM ALLOYS;

EID: 59349113596 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3065536 Document Type: Article

Times cited : (110)

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