Electrical investigation of v -defects in GaN using Kelvin probe and conductive atomic force microscopy

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Lochthofen, A ^a   Mertin, W ^a   Bacher, G ^a   Hoeppel, L ^b   Bader, S ^b   Off, J ^b   Hahn, B ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; DEFECT STRUCTURES; DEFECTS; ELECTRON AFFINITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; MOSFET DEVICES; PHOSPHORUS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE DEFECTS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CONDUCTIVE ATOMIC FORCE MICROSCOPY (C AFM); CURRENT FLOWING; ELECTRICAL CHARACTERIZATIONS; HETEROSTRUCTURES; KELVIN PROBE (KP); KELVIN PROBE FORCE MICROSCOPY (KPFM); N-DOPED; V DEFECTS; V-DEFECTS;

IMAGING TECHNIQUES;

EID: 47549111692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953081     Document Type: Article

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