Voltage drop in an (AlxGa1-x)0.5in 0.5P light-emitting diode probed by Kelvin probe force microscopy

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Katzer, Kl D ^a   Mertin, W ^a   Bacher, G ^a   Jaeger, A ^b   Streubel, K ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HETEROJUNCTIONS; LAYERED MANUFACTURING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM;

ACTIVE LAYERS; KELVIN PROBE FORCE MICROSCOPY; POWER EFFICIENCY; VOLTAGE DROP;

LIGHT EMITTING DIODES;

EID: 33748566006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2347184     Document Type: Article

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