Measurement of contact potential of GaAs pn junctions by Kelvin probe force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4893-4894

  Mizutani, Takashi ^a   Usunami, Takao ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Cleaved surface; Contact potential; GaAs pn junction; Kelvin probe force microscopy

Indexed keywords

BAND STRUCTURE; ELECTRIC POTENTIAL; ELECTROSTATICS; LIGHTING; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PROPERTIES; SURFACE STRUCTURE;

CLEAVED SURFACE; CONTACT POTENTIAL; KELVIN PROBE FORCE MICROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 0033176801     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4893     Document Type: Article

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