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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6473, Issue , 2007, Pages

Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin force microscope

(8) Lochthofen, André a Mertin, Wolfgang a Bacher, Gerd a Furitsch, Michael b Brüderl, Georg b Hahn, Berthold b Strauss, Uwe b Härle, Volker b

a UNIVERSITY OF DUISBURG ESSEN (Germany)

b OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

Degradation; GaN; Kelvin probe force microscopy; Laser diode

Indexed keywords

DEGRADATION; GALLIUM NITRIDE; HETEROJUNCTIONS; MICROSCOPIC EXAMINATION; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE POTENTIAL;

APPLIED VOLTAGE; KELVIN PROBE FORCE MICROSCOPY; KELVIN VOLTAGE; MIRROR FACET;

SEMICONDUCTOR LASERS;

EID: 34248682961 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.704855 Document Type: Conference Paper

Times cited : (3)

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