Electrically driven light emission from individual CdSe nanowires

Nano Letters

Volumn 8, Issue 12, 2008, Pages 4552-4556

  Doh, Yong Joo ^a,b   Maher, Kristin N ^a   Ouyang, Lian ^a   Yu, Chun L ^a   Park, Hongkun ^a,c   Park, Jiwoong ^d,e  

^a HARVARD UNIVERSITY   (United States)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c HARVARD UNIVERSITY   (United States)

^d HARVARD UNIVERSITY   (United States)

^e Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL MEASUREMENTS; ELECTRODE INTERFACES; HOLE LEAKAGES; KELVIN PROBE MICROSCOPIES; POTENTIAL DROPS; SCHOTTKY BARRIERS; THREE-TERMINAL DEVICES;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DROPS; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; NANOWIRES; SCHOTTKY BARRIER DIODES;

ELECTRIC WIRE;

EID: 61649128767     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802797y     Document Type: Article

References (29)

1. Lieber, C. M. MRS Bull. 2003, 28, 486.
2. Yang, P. MRS Bull. 2005, 30, 85.
3. Samuelson, L. Mater. Today 2003, 6, 22.
4. Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. Science 2001, 293, 1455.
5. Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292, 1897.
6. Duan, X.; Huang, Y.; Cui, Y.; Wang, J.; Lieber, C. M. Nature 2001, 409, 66.
7. Gudiksen, M. S.; Lauhon, L. J.; Wang, J.; Smith, D. C.; Lieber, C. M. Nature 2002, 415, 617.
8. Minot, E. D.; Kelkensberg, F.; van Kouwen, M.; van Dam, J. A.; Kouwenhoven, L. P.; Zwiller, V.; Borgström, M. T.; Wunnicke, O.; Verheijen, M. A.; Bakkers, E. P. A. M. Nano Lett. 2007, 7, 367.
9. Gudiksen, M. S.; Maher, K. N.; Ouyang, L.; Park, H. Nano Lett. 2005, 5, 2257.
10. Chen, J.; Cheng, G.; Stern, E.; Reed, M. A.; Avouris, Ph. Nano Lett. 2007, 7, 2276.
11. Misewich, J. A.; Martel, R.; Avouris, Ph.; Tsang, J. C.; Heinze, S.; Tersoff, J. Science 2003, 300, 783.
12. Freitag, M.; Chen, J.; Tersoff, J.; Tsang, J. C.; Fu, Q.; Liu, J. Avouris, Ph. Phys. Rev. Lett. 2004, 93, 076803.
13. Freitag, M.; Perebeinos, V.; Chen, J.; Stein, A.; Tsang, J. C.; Miseweich, J. A.; Martel, R.; Avouris, Ph. Nano Lett. 2004, 4, 1063.
14. Chen, J.; Perebeinos, V.; Freitag, M.; Tsang, J.; Fu, Q.; Liu, J.; Avouris, Ph. Science 2005, 310, 1171.
15. Mann, D.; Kato, Y. K.; Kinkhabwala, A.; Pop, E.; Cao, J.; Wang, X.; Zhang, L.; Wang, Q.; Guo, J.; Dai, H. Nat. Nanotechnol. 2007, 2, 33.
16. Adam, E.; Aguirre, C. M.; Marty, L.; St-Antoine, B. C.; Meunier, F.; Desjardins, P.; Ménard, D.; Martel, R. Nano Lett. 2008, 8, 2351.
17. Ahn, Y.; Dunning, J.; Park, J. Nano Lett. 2005, 5, 1367.
18. Gu, Y.; Kwak, E.-S.; Lensch, J. L.; Allen, J. E.; Odom, T. W.; Lauhon, L. J. Appl. Phys. Lett. 2005, 87, 043111.
19. Nonnenmacher, M.; O'Boyle, M. P.; Wickramasinghe, H. K. Appl. Phys. Lett. 1991, 58, 2921.
20. Ouyang, L.; Maher, K. N.; Yu, C. L.; McCarty, J.; Park, H. J. Am. Chem. Soc. 2007, 129, 133.
21. Gu, Y.; Lauhon, L. J. Appl. Phys. Lett. 2006, 89, 143102.
22. Wu, J.; Gu, Q.; Guiton, B. S.; de Leon, N. P.; Ouyang, L.; Park, H. Nano Lett. 2006, 6, 2313.
23. g) curve. For the device in Figure 2, it is estimated to be α = 0.0056.
24. Berger, L. I. Semiconductor Materials; CRC Press: New York, 1997.
25. Guo, J.; Alam, M. A. Appl. Phys. Lett. 2005, 86, 023105.
26. Tersoff, J.; Freitag, M.; Tsang, J. C.; Avouris, Ph. Appl. Phys. Lett. 2005, 86, 263108.
27. Sze, S. M. Physics of Semiconductor Devices; Wiley: New York, 1981.
28. Okuto, Y.; Crowell, C. R. Phys. Rev. B 1972, 6, 3076.
29. Charrier, D. S. H.; Kemerink, M.; Smalbrugge, B. E.; de Vries, T.; Janssen, R. A. J. ACS Nano 2008, 2, 622.