Edge termination of SiC Schottky diodes with guard rings formed by high energy boron implantation

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 989-992

  Vassilevski, K V ^a   Horsfall, A B ^a   Johnson, C M ^b   Wright, N G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Boron; Edge Termination; Guard Rings; Ion Implantation; Schottky Diodes

Indexed keywords

ACTIVATION ENERGY; ION IMPLANTATION; OPTIMIZATION; PHOTOLITHOGRAPHY; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON;

EDGE TERMINATION; GUARD RINGS; JUNCTION TERMINATION EXTENSIONS (JTE);

SILICON CARBIDE;

EID: 8744280271     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.989     Document Type: Conference Paper

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