Thermal stability of Re Schottky contacts to 6H-SiC

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 581-583

  Shalish, I ^a,b   Shapira, Yoram ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONTACTS; PHASE DIAGRAMS; SCHOTTKY BARRIER DIODES; SPECTROMETRY; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; THIN FILMS;

BACKSCATTERING SPECTROMETRY;

RHENIUM;

EID: 0034513244     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887472     Document Type: Article

References (26)

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