HRTEM characterization of the NiSi2 growth into the Si(111) surface

Applied Surface Science

Volumn 102, Issue , 1996, Pages 156-158

  Hietschold, M ^a   Schulze, S ^a   Falke, U ^a   Fenske, F ^b   Wolke, W ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; IMAGE ANALYSIS; NICKEL COMPOUNDS; PHASE COMPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON TRANSPARENCY; METAL SEMICONDUCTOR JUNCTIONS; NICKEL SILICIDE PLATELETS; NICKEL TITANIUM SILICON LAYERED SYSTEM; SOLID STATE REACTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0030564858     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00037-2     Document Type: Article

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