Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

IEEE Electron Device Letters

Volumn 24, Issue 6, 2003, Pages 402-404

  Zhao, Jian H ^a   Alexandrov, Petre ^b   Li, X ^a  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

Edge termination; High voltage diode; Schottky diode; SiC diode

Indexed keywords

CURRENT DENSITY; ELECTRON MOBILITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

HIGH VOLTAGE DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0041698396     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.813370     Document Type: Article

References (9)

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