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IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 665-672

SiC power Schottky and PiN diodes

(5) Singh, Ranbir b Cooper Jr , James A a,c Melloch, Michael R a,c Chow, T P a,d Palmour, John W a,b

a IEEE

b Arkansas Power Electronics International Inc (United States)

c PURDUE UNIVERSITY (United States)

d RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

Diode; Leakage; On resistance; PiN; Rectifiers; Reverse recovery; Schottky; SiC

Indexed keywords

CURRENT DENSITY; ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; POWER SUPPLY CIRCUITS; SEMICONDUCTOR DIODES; SILICON CARBIDE; SWITCHING; TEMPERATURE MEASUREMENT;

EDGE TERMINATION TECHNIQUES; POWER DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0036541474 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.992877 Document Type: Article

Times cited : (218)

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