4H-SiC schottky diodes with high on/off current ratio

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1145-1148

  Vassilevski, K V ^a,b   Horsfall, A B ^a   Johnson, C M ^a   Wright, N G ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

4tf SiC; Nickel; Schottky barrier; Titanium

Indexed keywords

DIODES; LEAKAGE CURRENTS; NICKEL; SILICON CARBIDE; TITANIUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ENERGY GAP; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

4H-SIC SCHOTTKY DIODES; 4TF-SIC; BARRIER HEIGHTS; ON/OFF CURRENT RATIO; REVERSE LEAKAGE CURRENT; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; EPITAXIAL WAFERS;

SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

EID: 0036435367     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1145     Document Type: Conference Paper

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