XTEM studies of nickel suicide growth on Si(100) using a Ni/Ti bilayer system

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 2, 1997, Pages 615-621

  Falke, U ^a   Fenske, F ^b   Schulze, S ^a   Hietschold, M ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

NICKEL SILICIDE;

NICKEL COMPOUNDS;

EID: 0031208675     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199708)162:2<615::AID-PSSA615>3.0.CO;2-Q     Document Type: Article

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