Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring

Semiconductors

Volumn 34, Issue 7, 2000, Pages 835-843

  Kyuregyan, A S ^a  

^a All Russia Electrical Engineering Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034215133     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188084     Document Type: Article

References (17)

1. B. J. Baliga, Modern Power Devices (World Sci., Singapore, 1987), p. 132.
2. V. C. Kao and E. D. Wolley, Proc. IEEE 55, 1409 (1967).
3. H. Yilmaz, IEEE Trans. Electron Devices ED-38, 1666 (1991).
4. K. Hwang and D. H. Navon, IEEE Trans. Electron Devices ED-31, 1126 (1984).
5. R. Stengl and U. Gosele, Tech. Dig. Int. Electron Devices Meet. 154 (1985).
6. S. Ahmad and J. Akhtar, IEEE Electron Device Lett. EDL-6, 465 (1985).
7. R. Stengl et al., IEEE Trans. Electron Devices ED-33, 46 (1986).
8. V. Boisson, M. Le Helley, and J.-P. Chante, IEEE Trans. Electron Devices ED-33, 80 (1986).
9. S. Georgescu, T. Dunca, D. Sdrulla, and I. Gupta, Solid-State Electron. 29, 1035 (1986).
10. V. K. A. Temple and W. Tanrapourn, IEEE Trans. Electron Devices ED-33, 1601 (1986).
11. J. Akhtar and S. Ahmad, Solid-State Electron. 33, 1459 (1990).
12. P. Austing, J. L. Sanches, and R. Berriane, Solid-State Electron. 39, 593 (1996).
13. M. A. Lavrent'ev and B. V. Shabat, The Theory of the Functions of Complex Variables: Methods (Nauka, Moscow, 1987).
14. N. I. Muskhelishvili, Singular Integral Equations (Nauka, Moscow, 1968; Wolters-Noordhoff, Groningen, 1972), p. 511.
15. S. Merchant et al., in Proceedings of the 3rd International Symposium on Power Semiconductor Devices and IC's, 1991, p. 31.
16. S. Merchant, IEEE Trans. Electron Devices ED-46, 1264 (1999).
17. S. Merchant, IEEE Trans. Electron Devices ED-42, 1264 (1995).