Threshold displacement energy in GaN: Ab initio molecular dynamics study

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Xiao, H Y ^a   Gao, Fei ^b   Zu, X T ^a   Weber, W J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS; AB INITIO MOLECULAR DYNAMICS METHODS; CRYSTALLOGRAPHIC DIRECTIONS; DEFECT CONFIGURATIONS; DUMB-BELL CONFIGURATION; EXPERIMENTAL MEASUREMENTS; GALLIUM ATOMS; LOW ENERGIES; N-DEFECTS; NITROGEN ATOM; THRESHOLD DISPLACEMENT ENERGY; VARIOUS CONFIGURATION;

DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM;

ATOMS;

EID: 67650257594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153277     Document Type: Conference Paper

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