The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 209-213

  Kucheyev, S O ^a   Williams, J S ^a   Zou, J ^b   Jagadish, C ^a   Li, G ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c LED Expert Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ION BOMBARDMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; HEAVY ION BOMBARDMENT; IMPLANTATION TEMPERATURE; RADIATION DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035334089     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00459-6     Document Type: Conference Paper

References (9)