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Volumn 127-128, Issue , 1997, Pages 463-466
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Ion implantation of epitaxial GaN films: Damage, doping and activation
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
GRAIN BOUNDARIES;
ION IMPLANTATION;
PHOTOLUMINESCENCE;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
CHANNELING;
GALLIUM NITRIDE;
SEMICONDUCTING FILMS;
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EID: 0031547830
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(97)00076-1 Document Type: Article |
Times cited : (42)
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References (10)
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