Displacement energy surface in 3C and 6H SiC

Journal of Nuclear Materials

Volumn 278, Issue 2, 2000, Pages 258-265

  Devanathan, R ^a   Weber, W J ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMS; COMPUTER SIMULATION; HEAT TREATMENT; MOLECULAR DYNAMICS; PHASE EQUILIBRIA; PHASE SEPARATION; THERMAL EFFECTS;

PRIMARY KNOCK-ON ATOMS (PKA); TERSOFF POTENTIAL; THRESHOLD DISPLACEMENT ENERGY;

SILICON CARBIDE;

EID: 0033882405     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(99)00266-4     Document Type: Article

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