Damage production in GaAs and GaAsN induced by light and heavy ions

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Bjorkas C ^a   Nordlund, K ^a   Arstila, K ^a   Keinonen, J ^a   Dhaka, V D S ^b   Pessa, M ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HEAVY IONS; IRRADIATION; MOLECULAR DYNAMICS;

AMORPHOUS ZONES; ANTISITE CLUSTERS; HIGH-TEMPERATURE ANNEALING; ION IRRADIATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33748877365     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2336306     Document Type: Article

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