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Volumn 65, Issue 4, 2002, Pages 452021-4520210
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Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics study
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
SILICON CARBIDE;
ARTICLE;
ATOM;
CRYSTALLOGRAPHY;
ELECTRON;
ELECTRONICS;
ENERGY;
MATERIALS;
MATERIALS TESTING;
MOLECULAR DYNAMICS;
RADIATION INJURY;
SIMULATION;
TECHNOLOGY;
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EID: 0037081420
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (73)
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References (34)
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