Ab initio calculations of structural and energetic properties of defects in gallium nitride

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Xiao, H Y ^a   Zu, X T ^a   Gao, Fei ^b   Weber, W J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(PL) PROPERTIES; AB INITIO CALCULATIONS; AB INITIO TOTAL ENERGY; ENERGETIC PROPERTIES; ENERGY DIFFERENCES; FIRST-PRINCIPLES CALCULATIONS; INTERSTITIALS; INTRINSIC DEFECTS; RICH CONDITIONS; TETRAHEDRAL CONFIGURATIONS;

EID: 46649097051     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2947604     Document Type: Article

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