Lattice site location and annealing behavior of implanted Ca and Sr in GaN

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  De Vries, B ^a,b   Vantomme, A ^a,b   Wahl, U ^c,d   Correia, J G ^c,d,e   Araujo J P ^f   Lojkowski, W ^g   Kolesnikov, D ^g  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^e CERN   (Switzerland)

^f UNIVERSITY OF PORTO   (Portugal)

^g INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALCIUM; ION IMPLANTATION; RADIOISOTOPES; STRONTIUM; VACUUM APPLICATIONS;

LATTICE SITE LOCATION; POSITION-SENSITIVE DETECTOR; SINGLE-CRYSTALLINE WURTZITE GAN;

GALLIUM NITRIDE;

EID: 33746864529     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2215091     Document Type: Article

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