Displacement threshold energies in β-SiC: Section 2. Radiation effects in monolithic SiC-based ceramics

Journal of Nuclear Materials

Volumn 253, Issue 1-3, 1998, Pages 47-52

  Devanathan, R ^a   Diaz De La Rubia, T ^b   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMS; CALCULATIONS; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; RADIATION EFFECTS;

DENSITY FUNCTIONAL THEORY; DISPLACEMENT THRESHOLD ENERGY; MOLECULAR DYNAMIC SIMULATION; REPULSIVE POTENTIAL; TERSOFF POTENTIAL;

SILICON CARBIDE;

EID: 0032026669     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(97)00304-8     Document Type: Article

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