Direct measurement of curvature-dependent ion etching of GaN

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Cui, Bentao ^a   Cohen, P I ^a   Dabiran, A M ^b   Jorgenson, Robert ^c  

^a University of Minnesota   (United States)

^b SVT ASSOCIATES   (United States)

^c Advanced Research Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM FLUX; CURVETURE-DEPENDENT ION ETCHING; NITROGEN IONS; ROUGHENING COEFFICIENT;

COALESCENCE; CONTINUUM MECHANICS; DENSITY (SPECIFIC GRAVITY); NITROGEN; REACTIVE ION ETCHING; SPUTTERING;

GALLIUM NITRIDE;

EID: 27744437501     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2085313     Document Type: Article

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