Fast neutron irradiation effects in n-GaN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 2, 2007, Pages 436-442

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Markov, A V ^a   Pearton, S J ^b   Kolin, N G ^c   Merkurisov, D I ^c   Boiko, V M ^c   Lee, Cheul Ro ^d   Lee, In Hwan ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c Federal State Unitary Enterprise   (Russian Federation)

^d Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON REMOVAL RATE; FAST NEUTRON IRRADIATION; FERMI LEVEL PINNING;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; ELECTRON TRAPS; FERMI LEVEL; GALLIUM NITRIDE;

NEUTRON IRRADIATION;

EID: 34047178474     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2713406     Document Type: Article

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