Strong surface disorder and loss of N produced by ion bombardment of GaN

Applied Physics Letters

Volumn 76, Issue 26, 2000, Pages 3899-3901

  Kucheyev, S O ^a   Williams, J S ^a   Jagadish, C ^a   Li, G ^b   Pearton, S J ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Kaohsiung Monomer Corporation   (Taiwan)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000765291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126814     Document Type: Article

References (10)

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