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Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

Interaction of defects and H in proton-irradiated GaN(Mg,H)

(2) Myers, S M a Seager, C H a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION; NUCLEAR REACTIONS; ROOM TEMPERATURE; VACCANCY;

CRYSTAL DEFECTS; HYDROGEN; IRRADIATION; PHOTOLUMINESCENCE; PROTONS; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM;

EID: 18844370592 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1883309 Document Type: Article

Times cited : (8)

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