Modification of the N bonding environment in GaN after high-dose Si implantation: An x-ray absorption study

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Katsikini, M ^a   Pinakidou, F ^a   Paloura, E C ^a   Boscherini, F ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; ION IMPLANTATION; MICROSTRUCTURE; SILICON; X RAY ANALYSIS;

NEAR EDGE XAFS (NEXAFS) SPECTRA; X-RAY ABSORPTION FINE STRUCTURE (XAFS) SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 34247634166     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717158     Document Type: Conference Paper

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