Molecular dynamics study of defect formation in GaN cascades

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 202, Issue , 2003, Pages 93-99

  Nord, J ^a   Nordlund, K ^a   Keinonen, J ^a   Albe, K ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Defects; GaN; Irradiation; Semiconductors

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; DEFECTS; GALLIUM NITRIDE; ION BOMBARDMENT; MOLECULAR DYNAMICS; SEMICONDUCTOR DEVICE MANUFACTURE;

DEFECT FORMATIONS;

IRRADIATION;

EID: 0037378213     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01839-6     Document Type: Conference Paper

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