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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 48-50

High growth rate process in a SiC horizontal CVD reactor using HCl

Author keywords

CVD; Epitaxy; Growth rate; HCl

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS;

EID: 30344460980     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.023     Document Type: Conference Paper
Times cited : (24)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.