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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 48-50
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High growth rate process in a SiC horizontal CVD reactor using HCl
a
b
XVI Strada
(Italy)
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Author keywords
CVD; Epitaxy; Growth rate; HCl
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
EPITAXIAL GROWTH;
PHOTOLUMINESCENCE;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
SILICON WAFERS;
GROWTH RATE;
HCL;
ROOM TEMPERATURE;
CHEMICAL REACTORS;
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EID: 30344460980
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2005.10.023 Document Type: Conference Paper |
Times cited : (24)
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References (4)
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