Integrated process modeling and experimental validation of silicon carbide sublimation growth

Journal of Crystal Growth

Volumn 252, Issue 4, 2003, Pages 523-537

  Ma, R H ^a   Zhang, H ^a   Ha, S ^b   Skowronski, M ^b  

^a Stony Brook University   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

A1. Growth models; A1. Line defects; A1. Mass transfer; A1. Stresses; A3. Growth from vapor

Indexed keywords

CRYSTAL GROWTH; HEAT TRANSFER; INTERFACES (MATERIALS); MASS TRANSFER; SUBLIMATION; THERMAL STRESS;

LINE DEFECTS;

SILICON CARBIDE;

EID: 0037403942     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00944-8     Document Type: Article

References (26)

1. Pons M., Anikin M., Chourou K., Dedulle J.M., Madar R., Banlquet E., Pisch A., Bernard C., Grosse P., Faure C., Basset G., Grange Y. Mater. Sci. Eng. B. 61-62:1999;18.
2. Räback P., Yakimova R., Syväjärvi M., Nieminen R., Janzén E. Mater. Sci. Eng. B. 61-62:1999;89.
3. Segal A.S., Vorobev A.N., Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A., Zhmakin A.I. Mater. Sci. Eng. B. 61-62:1999;40.
4. Selder M., Kadinski L., Makarov Yu.N., Durst F., Wellmann P., Straubinger T., Hofmann D., Karpov S., Ramm M. J. Crystal Growth. 211:2000;333.
5. Ma R.-H., Chen Q.-S., Zhang H., Prasad V., Balkas C.M., Yushin N.K. J. Crystal Growth. 211:2000;352.
6. Chen Q.-S., Zhang H., Ma R.-H., Prasad V. J. Crystal Growth. 225:2001;299.
7. Chen Q.-S., Zhang H., Prasad V. J. Crystal Growth. 230:2001;239.
8. Hofmann D., Bickermann M., Eckstein R., Kölbl M., Müller St.G., Schmitt E., Weber A., Winnacker A. J. Crystal Growth. 198/199:1999;1005.
9. Ha S., Rohrer G.S., Skowronski M., Heydemann V.D., Snyder D.W. Mater. Sci. Forum. 338-342:2000;67.
10. Karpov S.Yu., Kulik A.V., Zhmakin I.A., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Vodakov Yu.A. J. Crystal Growth. 211:2000;347.
11. Müller St.G., Glass R.C., Hobgood H.M., Tsvetkov V.F., Brady M., Henshall D., Jenny J.R., Malta D., Carter C.H. Jr. J. Crystal Growth. 211:2000;325.
12. Selder M., Kadinski L., Durst F., Hofmann D. J. Crystal Growth. 226:2001;501.
13. Ma R.-H., Zhang H., Prasad V., Dudley M. Crystal Growth Des. 3:2002;213.
14. R.-H. Ma, H. Zhang, V. Prasad, S. Ha, M. Skowronski, Proceedings of the 2001 ASME International Mechanical Engineering Congress and Exposition, Heat Transfer Division, Vol. 5, New York City, NY, 2001, p. 73.
15. Gresho P.M., Derby J.J. J. Crystal Growth. 85:1987;40.
16. Modest M.F. Radiative Heat Transfer. 1993;McGraw-Hill, New York.
17. Glass R.C., Henshall D., Tsvetkov V.F., Carter C.H. Jr. Phys. Status Solidi (B). 202:1997;149.
18. D.W. Chase Jr., NIST-JANAF Thermochemical Tables, 4th Edition, American Chemical Society and American Institute of Physics, J. Phys. Chem. Ref. Data, Monograph No. 9, 1998.
19. Kaldis E., Piechotka E.M. Bulk crystal growth by physical vapor transport. Hurle D.I.J. Handbook of Crystal Growth. Vol. 2:1994;615 Elsevier Science, Amsterdam.
20. Jordan A.S., Von Neida A.R., Caruso R. J. Appl. Phys. 52:1981;3331.
21. Boley B., Weiner J. Theory of Thermal Stresses. 1960;Wiley, New York.
22. Timoshenko S., Goodier J.N. Theory of Elasticity. 1970;McGraw-Hill, New York.
23. Kamitani K., Grimsditch M., Nipko J.C., Loong C.-K. J. Appl. Phys. 82(6):1997;3152.
24. Davies J., Simpson P. Induction Heating Handbook. 1979;McGraw-Hill, New York.
25. Wellmann P.J., Bickermann M., Hofmann D., Kadinski L., Selder M., Straubinger T.L., Winnacker A. J. Crystal Growth. 216:2000;263.
26. Samant A.V., Zhou W.L., Pirouz P. Phys. Status Solidi A. 166:1998;155.