Simulation of SiC deposition from SiH4/C3 H8/Ar/H2 mixtures in a cold-wall CVD reactor

Surface and Coatings Technology

Volumn 177-178, Issue , 2004, Pages 382-388

  Dollet, A ^a   de Persis, S ^a   Pons, M ^b   Matecki, M ^a  

^a CNRS   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Chemical mechanism; Chemical vapor deposition (CVD); Reactor model; Silane; Silicon carbide; Transport phenomena

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CODES (SYMBOLS); COMPUTER SIMULATION; MIXTURES; SURFACE PHENOMENA; THERMAL DIFFUSION;

DEPOSITION RATE;

SILICON CARBIDE;

COATING;

EID: 1342310585     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2003.09.032     Document Type: Article

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