Chemical vapor deposition of silicon carbide epitaxial films and their defect characterization

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 332-339

  Dhanaraj, Govindhan ^a   Chen, Yi ^a   Chen, Hui ^a   Cai, Dang ^a   Zhang, Hui ^a   Dudley, Michael ^a  

^a Stony Brook University   (United States)

Author keywords

Characterization; Chemical vapor deposition (CVD); Dislocations; Epitaxial growth; Silicon carbide (SiC); Synchrotron x ray topography; X ray topography

Indexed keywords

SYNCHROTRON X-RAY TOPOGRAPHY; X-RAY TOPOGRAPHY;

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; EPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 34249076132     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0084-2     Document Type: Conference Paper

References (21)

1. N.G. Hingorani and K.E. Stahlkopf, Scientific Am. 269, 78 (1993).
2. M. Bhatnagar and B.J. Baliga, IEEE Trans. Electron. Dev. 40, 645 (1993).
3. B.J. Baliga, Proc. IEEE 82, 1112 (1994).
4. O. Kordina, C. Hallin, A. Ellison, A.S. Bakin, I.G. Ivanov, A. Henry, R. Yakimova, M. Touminen, A. Vehanen, and E. Janzen, Appl. Phys. Lett. 69, 1456 (1996).
5. M.A. Fanton, M. Skowronski, D.W. Snyder, H.J. Chung, S. Nigam, B.B. Weiland, and S.W. Huh, Mater. Res. Forum 457-460, 87 (2004),
6. S. Ha, P. Mieszkowaki, M. Skowronski, and L.B. Rowland, J. Cryst. Growth 244, 257 (2002).
7. G. Dhanaraj, X.R. Huang, M. Dudley, V. Prasad, R.H. M. in Crystal Growth Technology, ed. K. Byrappa T. Ohachi, William Andrew (New York: Springer, 2003), pp. 181-232.
8. G. Dhanaraj, F. Liu, M. Dudley, H. Zhang, and V. Prasad, Mater. Res. Soc. Symp. Proc. 815, J5311 (2004).
9. G. Dhanaraj, M. Dudley, R.-H. Ma, H. Zhang, and V. Prasad, Rev. Scientific Instrum. 75, 2843 (2004).
10. G. Dhanaraj, M. Dudley, Y. Chen, B. Raghathamachar, B. Wu, and H. Zhang, J. Cryst. Growth 287, 344 (2006).
11. Y. Chen, G. Dhanaraj, H. Chen, W. Vetter, M. Dudley, H. Zhang, Mater. Res. Soc. Symp. 891, 0891-EE12-11 (2005).
12. G. Dhanaraj, Y. Chen, M. Dudley, and H. Zhang, Mater. Sci. Forum 527-529, 67 (2006),
13. Y. Chen, G. Dhanaraj, M. Dudley, H. Zhang, R. Ma, Y. Shishkin, S.E. Saddow, Mater. Res. Soc. Symp., 0911-B09-04.
14. G. Dhanaraj, Y. Chen, H. Chen, W.M. Vetter, H. Zhang, M. Dudley, Mater. Res. Soc. Symp., 0911-B05-27.
15. R.H. Ma, H. Zhang, V. Prasad, and M. Dudley, Cryst. Growth Des 2, 213 (2002).
16. S. Ha, P. Mieszkowski, M. Skowronski, and L.B. Rowland, J. Cryst. Growth 244, 257 (2002),
17. T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, and K. Arai, J. Cryst. Growth 260, 209 (2004).
18. T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, and K. Arai, J. Cryst. Growth 271, 1 (2004).
19. Z. Zhang, A. Shrivastava, T. S. Sudarshan, Mater. Sci. Forum (2005).
20. G. Dhanaraj (Invited presentation at II-VI Inc., NJ USA Jan, 3, 2005).
21. H. Klapper and H. Küppers, Acta Cryst. A 29, 495 (1973).