SCOPUS 정보 검색 플랫폼

Volumn 250, Issue 1-2, 2003, Pages 14-21

Epitaxy growth kinetics of GaN films

Author keywords

A1. Computer simulation; A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; A3. Chemical vapor deposition processes; B1. Nitrides

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SINGLE CRYSTALS; SUBLIMATION;

DISLOCATION DENSITY;

VAPOR PHASE EPITAXY;

EID: 0037371875 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)02208-X Document Type: Conference Paper

Times cited : (34)

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